V.M. Botnaryuk: search on Z-Library

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1

Hydride vapour phase epitaxy of GaN on molecular beam epitaxial GaN substrates

V.V Bel'kov, V.M Botnaryuk, L.M Fedorov, I.N Goncharuk, S.V Novikov, V.P Ulin, Yu.V Zhilyaev, T.S Cheng, N.J Jeffs, C.T Foxon, N.I Katsavets, I Harrison

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 218 KB

english, 1998

2

Radiation degradation of solar cells based on InPCdS heterojunctions

V.M. Botnaryuk, L.V. Gorchiak, G.M. Grigorieva, M.B. Kagan, T.A. Kozyreva, T.L. Lyubashevskaya, E.V. Russu, A.V. Simashkevich

Journal:

Solar Energy Materials

Year:

1990

Language:

english

File:

PDF, 334 KB

english, 1990

3

Optical characterization of ultra-pure GaAs

Yu. V. Zhilyaev, N. K. Poletaev, V. M. Botnaryuk, T. A. Orlova, L. M. Fedorov, Sh. A. Yusupova, A. Owens, M. Bavdaz, A. Peacock, B. O'Meara, H. Helava

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 163 KB

english, 2003

4

Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides

V. M. Botnaryuk, A. V. Koval’, A. V. Simashkevich, D. A. Sherban, V. Yu. Rud’, Yu. V. Rud’

Journal:

Year:

1997

Language:

english

File:

PDF, 110 KB

english, 1997

5

Photosensitivity of InP/CdS heterostructures in linearly polarized light

V. M. Botnaryuk, L. V. Gorchak, V. N. Pleshka, V. Yu. Rud’, Yu. V. Rud’

Journal:

Year:

1997

Language:

english

File:

PDF, 77 KB

english, 1997

6

Photoelectric properties ofn-CdS/p-InP heterojunctions

V. M. Botnaryuk, L. V. Gorchak, I. I. Diaconu, V. Yu. Rud’, Yu. V. Rud’

Journal:

Year:

1998

Language:

english

File:

PDF, 124 KB

english, 1998

7

Photoelectric properties of GaN/GaP heterostructures

V. M. Botnaryuk, S. D. Raevskii, V. V. Bel’kov, Yu. V. Zhilyaev, Yu. V. Rud’, L. M. Fedorov, V. Yu. Rud’

Journal:

Year:

1998

Language:

english

File:

PDF, 76 KB

english, 1998

8

Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures

V. M. Botnaryuk, Yu. V. Zhilyaev, Yu. V. Rud’, V. Yu. Rud’

Journal:

Year:

1999

Language:

english

File:

PDF, 98 KB

english, 1999

9

Sulfide passivation of GaAs power diodes

V. M. Botnaryuk, Yu. V. Zhilyaev, E. V. Konenkova

Journal:

Year:

1999

Language:

english

File:

PDF, 62 KB

english, 1999

10

Photoelectric properties of ITO/p+-p−-InP solar cells in linearly polarized light

V. M. Botnaryuk, L. V. Gorchak, S. D. Raevskii, D. A. Sherban, V. Yu. Rud’, Yu. V. Rud’

Journal:

Technical Physics

Year:

1998

Language:

english

File:

PDF, 104 KB

english, 1998

11

Behavior of epitaxial GaAs layers asαparticle detectors

V. M. Botnaryuk, Yu. V. Zhilyaev, A. M. Ivanov, N. B. Strokan, L. M. Fedorov

Journal:

Technical Physics Letters

Year:

1998

Language:

english

File:

PDF, 91 KB

english, 1998

12

Correlation between the electrical and luminescent properties of high-purity gallium arsenide

M. V. Botnaryuk, Yu. V. Zhilyaev, T. A. Orlova, N. K. Poletaev, L. M. Fedorov, Sh. A. Yusupova

Journal:

Technical Physics Letters

Year:

2004

Language:

english

File:

PDF, 44 KB

english, 2004

13

Chloride vapor-phase epitaxy of gallium nitride on silicon: Structural and luminescent characteristics of epilayers

V. N. Bessolov, V. M. Botnaryuk, Yu. V. Zhilyaev, E. V. Konenkova, N. K. Poletaev, S. D. Raevskiĭ, S. N. Rodin, S. L. Smirnov, Sh. Sharofidinov, M. P. Shcheglov, Hee Seok Park, Masayoshi Koike

Journal:

Technical Physics Letters

Year:

2006

Language:

english

File:

PDF, 232 KB

english, 2006

14

Gallium Nitride Thick Layers: Epitaxial Growth and Separation from Substrates

Bel’kov, V. V., Botnaryuk, V. M., Fedorov, L. M., Diakonu, I. I., Krivolapchyuk, V. V., Scheglov, M. P., Zhilyaev, Yu. V.

Journal:

MRS Proceedings

Year:

1996

Language:

english

File:

PDF, 223 KB

english, 1996

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